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Journal of the Electrochemical Society, Vol.152, No.9, G695-G697, 2005
Influence of slurry chemistry on frictional force in copper chemical mechanical polishing
In situ frictional force measurement technique was developed for chemical mechanical polishing (CMP) process, and the influence of slurry chemistry of glycine/quinaldic acid/H2O2 on the frictional force was investigated. The results indicate that the CMP polishing rate increases nonlinearly with frictional force, and the coefficient of friction changes at the transitional friction force which is controlled by the concentration of the chelating agents. (c) 2005 The Electrochemical Society.