Ta2O5/PE-SiN metal-insulator-metal (MIM) capacitors with high capacitance density of 4.7 fF//mu m(2) for mixed-signal rf applications were originally integrated by adopting 120 angstrom-thick-PE-SiN as a barrier layer between bottom electrode and 80-angstrom-thick metal-organic chemical-vapor deposition Ta2O5 layer. Inserting a PE-SiN layer resulted in dramatic reduction of leakage current at -3.3 V from 8.0 E-5 A/cm(2) with only Ta2O5 film to 9.3 E-8 A/cm(2) with Ta2O5/PE-sin layers. It was probably that the PE-SiN layer in the laminated structure provided a higher energy barrier than Ta2O5 as well as a physical diffusion barrier against oxygen into the bottom electrode. These laminated MIM capacitors also showed good linearities of capacitance with 302 ppm/V-2, 125 ppm/V, and 30.7 ppm/degrees C as well as an excellent matching property with 0.79%mu m. The breakdown voltage of capacitor was about 6 MV/cm and the lifetime (time-to-breakdown) of Ta2O5/PE-SiN MINI capacitor at 3.7 V and 25 degrees C was 198 000 years. The quality factor of 53.9 and capacitance density of 5.08 fF/mu m(2) at 2.4 GHz were obtained for 10 X 10 mu m(2) MIM capacitors. (c) 2005 American Vacuum Society.