Sr2SiO4: Eu3+ thin films have been grown on Al2O3 (0001) substrates using pulsed-laser deposition. The Sr2SiO4: Eu3+, thin films were grown at various oxygen pressures and substrate temperatures. The crystallinity and surface morphology of the films were investigated using x-ray diffraction and atomic-force microscopy. The crystallinity and surface roughness of the films are highly dependent on the deposition conditions. The photoluminescence spectra were measured at room temperature using a luminescence spectrometer and excitation by a broadband incoherent ultraviolet-light source with a dominant-excitation wavelength of 254 nm. Measurements of photoluminescence properties of Sr2SiO4:Eu3+, thin films have indicated that Al2O3 (0001) is a promising substrate for the growth of high-quality Sr2SiO4:Eu3+, films. The photoluminescence (PL) spectra exhibit a broadband emission extending from 565 to 670 nm and appear to be composed of several overlapping emission bands. The PL peaks are located at 582, 597, and 620 nm and the PL intensity increases with increasing oxygen pressure and reaches a maximum at 150 mTorr. This phosphor is promising for applications in flat-panel displays. (c) 2005 American Vacuum Society.