Laser crystallized polycrystalline silicon-germanium (Si1-xGex) thin films were characterized with Raman spectroscopy. For x >= 0.33, peak splitting of phonon modes is observed in the Raman spectra, a finding that is associated with phase segregation, Energy dispersive X-ray measurements confirm that those samples contain areas with poor and rich Ge concentrations, (C) 2005 Elsevier B.V. All rights reserved.