We investigated the preparation of (CuInSe)(1-x)(2ZnSe)(x) (CIZSe) thin films with different composition of zinc (0.0 <= X <= 0.42) using a two-stage technological process-evaporation of ZnSe, Cu and In components and subsequent selenization in a quartz tube (under N-2 flow at atmospheric pressure). XRD measurements showed that phase formation in CIZSe films depends on the processing regimes. The thin films had absorption coefficient alpha of the order alpha=10(4) cm(-1) and the band gap energy E-g was found to be in the range of E-g=0.99-1.24 eV with increasing Zn content. Some experimental efforts have been made for fabricating Al-Ni/ZnO/CdS/CIZSe/Ti-Mo/glass solar cells. (C) 2005 Elsevier B.V. All rights reserved.