In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5 x 10(8) Omega cm with in optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. (C) 2005 Elsevier B.V. All rights reserved.