The atomic layer deposition (ALD) of tungsten can be accomplished using sequential exposures of WF6 and Si2H6 (disilane). In this paper, W ALD is explored using in situ quartz crystal microbalance (QCM) measurements as a function of the reactant exposure and deposition temperature. The QCM measurements revealed that the WF6 reaction is self-limiting. In contrast, WALD growth rates exhibited a slow and continual increase for disilane exposures > 4 x 10(4) L. The WALD growth rate was also weakly temperature-dependent with an activation energy of 1.5 +/- 0.1 kcal/mol at T < 250 degrees C and a lower activation energy of 0.6 +/- 0.3 kcal/mol at T > 275 degrees C. The QCM results and previous Auger results for WALD yield the relationship between the silicon coverage deposited during the Si2H6 exposure and the tungsten coverage deposited during the WF6 exposure. The W/Si atomic ratio of similar to 1: 1 is consistent with earlier Auger investigations of the surface chemistry during W ALD at 200 degrees C. The QCM measurements are also consistent with silicon coverages of 1.7-2.1 monolayers after the Si2H6 exposures. These high silicon coverages are believed to result by silylene insertion from Si2H6 into surface Si-H bonds. (c) 2005 Elsevier B.V All rights reserved.