Mg- and Sn-doped In2O3 (MgInxSnyOz, 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris (2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III) [In(dpm)(3)], bis(2,4-pentanedionato)tin(II) [Sn(acac)(2)], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (N,N,N',N'-tetramethylethylenediamine)magnesium(II) [Mg(dpm)(2)(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be similar to 1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn6.93Oz. Annealing of such films in a vacuum raises the conductivity to similar to 2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.