Journal of Vacuum Science & Technology A, Vol.23, No.5, 1364-1366, 2005
Synchrotron radiation induced Si-H dissociation on H-Si(111)-1 X 1 surfaces studied by in situ monitoring in the undulator-scanning tunneling microscope system
Irradiation effects of the synchrotron radiation (SR), have been investigated on the hydrogen terminated- (H-) Si (111) surfaces by using the undulator beam and the in situ scanning tunneling microscope (STM). The small protrusions (SPs) generated by the undulator beam irradiation were assigned to the rest atoms with missing H. From the observed relation among the SP density, photon energy of the undulator beam and the total photon flux, it has been concluded that the main mechanism of the Si-H bond dissociation by the undulator beam irradiation is valence electron excitations of the Si-H bond by incident photons. (c) 2005 American Vacuum Society.