P-type zinc oxide (ZnO) thin films were synthesized by ion beam assisted deposition and their optical and electrical properties were investigated. It was found that after annealing at 400 degrees C, the transmittance of ZnO films became higher than that of the as-deposited films. Hall measurements indicated that ZnO films were p-type and the highest carrier concentration of 2.17 x 10(17) cm(-3) and mobility of 3.51 cm(2)/ Vs were obtained. Photoconductivity of the p-type ZnO films was also investigated and the conductivity of the films under ultraviolet illumination is about 600 times larger than that in the dark. (c) 2005 Elsevier B.V. All rights reserved.