Dispersion analysis was performed on low pressure chemically vapor deposited SiO2 films from tetraethylorthosilicate (TEOS) vapors at temperatures between 635 and 820 degrees C. The transmission spectra were best reproduced using four Lorentzian oscillators within the range 900 - 1400 cm(-1) and two Lorentzian oscillators within the range 700-900 cm(-1). This is justified if one considers that two kinds of Si-O-Si bridges exist in films: those bearing characteristics similar to bulk fused silica (bulk-like bridges) and those located near the interfaces and grain boundaries (boundary-like bridges). The ratio of the populations of bulk to boundary-like bridges increases with deposition temperature from 1.2:1 at 635 to 2.1:1 at 820 degrees C. Postdeposition annealing also causes an increase of bulk-like bridges at the of boundary-like ones. The distribution of the Si-O-Si angles in TEOS SiO2 films, related to the way atoms are arranged in them, is not a simple but it is a superposition of two Gaussians with different central values and full width at half maximum. The distance between the central angles of the two Gaussians was found to be between 7.7 degrees for films deposited at 635 degrees C and decreases to reach a value equal to 6.3 degrees for those deposited at 820 degrees C. (c) 2005 American Vacuum Society.