Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a Computational Fluid Dynamics Code

Seung Taek Seo; Yong Hee Lee; Kwang Soon Lee; Bum Kyoo Choi; Dae Rook Yang

Korean Journal of Chemical Engineering, Vol.22, No.6, 822-829, November, 2005

Seung Taek Seo, Yong Hee Lee¹, Kwang Soon Lee^†, Bum Kyoo Choi², and Dae Rook Yang³

Department of Chemical and Biomolecular Eng., Sogang University, 1-Shinsoodong, Mapogu, Seoul 121-742, Korea
¹LSI Division, Samsung Electronics Co., 446-711, Korea
²Department of Mechanical Eng., Sogang University, 1-Shinsoodong, Mapogu, Seoul 121-742, Korea
³Department of Chemical and Biomolecular Eng., Korea University, 1-Anamdong, Seongbukgu, Seoul 136-701, Korea

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A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

Keywords:ICP Etcher;C2F6 Plasmas;SiO2 Etching;Run-to-Run Control

[References]

An KJ, Kim HS, Yoo JB, Yeom GY, Thin Solid Films, 341(1-2), 176 (1999)
Bell FH, Joubert O, Oehrlein GS, Zhang Y, Vender D, J. Vac. Sci. Technol. A, 12(6), 3095 (1994)
Booth JP, Hancock G, Perry ND, Toogood MJ, J. Appl. Phys., 66, 5251 (1989)
Christophorou LG, Olthoff JK, Rao MV, J. Phys. Chem. Ref Data, 27, 1 (1998)
Cunge G, Booth JP, J. Appl. Phys., 85, 3952 (1999)
Efremov AM, Kim DP, Kim KT, Kim CI, Vacuum, 75, 321 (2004)
Feldsien J, Kim D, Economou DJ, Thin Solid Films, 374(2), 311 (2000)
Gray DC, J. Vac. Sci. Technol. B, 11, 1243 (1993)
Hebner GA, Appl. Surf. Sci., 192, 161 (2002)
Kim WC, Chin IS, Lee KS, Choi JH, Comput. Chem. Eng., 24(8), 1815 (2000)
Kono A, Konishi M, Kato K, Thin Solid Films, 407, 198 (2000)
Lieberman MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John Wiley, New York, NY (1994)
Mayer TM, Baker RA, J. Electrochem. Soc., 129, 585 (1982)
Meeks E, Ho P, Thin Solid Films, 365(2), 334 (2000)
Oehrlein GS, Zhang Y, Vender D, Joubert O, J. Vac. Sci. Technol. A, 12(2), 333 (1994)
Qi S, Lifang X, Xinxin M, Mingren SM, Appl. Surf. Sci., 206, 53 (2003)
Rolland L, Peignon MC, Cardinaud Ch, Turban G, Microelectron. Eng., 53, 375 (2000)
Thomas JW, Suzuki JR, Kable SH, Steinfeld JI, J. Appl. Phys., 60, 2775 (1986)
Tserepi AD, Derouard J, Booth JP, Sadeghi N, J. Appl. Phys., 66, 2124 (1997)
Xiao H, Introduction to Semiconductor Manufacturing Technology, Prentic Hall, Upper Saddle River, New Jersey (2001)

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[2] Bell FH, Joubert O, Oehrlein GS, Zhang Y, Vender D, J. Vac. Sci. Technol. A, 12(6), 3095 (1994)

[3] Booth JP, Hancock G, Perry ND, Toogood MJ, J. Appl. Phys., 66, 5251 (1989)

[4] Christophorou LG, Olthoff JK, Rao MV, J. Phys. Chem. Ref Data, 27, 1 (1998)

[5] Cunge G, Booth JP, J. Appl. Phys., 85, 3952 (1999)

[6] Efremov AM, Kim DP, Kim KT, Kim CI, Vacuum, 75, 321 (2004)

[7] Feldsien J, Kim D, Economou DJ, Thin Solid Films, 374(2), 311 (2000)

[8] Gray DC, J. Vac. Sci. Technol. B, 11, 1243 (1993)

[9] Hebner GA, Appl. Surf. Sci., 192, 161 (2002)

[10] Kim WC, Chin IS, Lee KS, Choi JH, Comput. Chem. Eng., 24(8), 1815 (2000)

[11] Kono A, Konishi M, Kato K, Thin Solid Films, 407, 198 (2000)

[12] Lieberman MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John Wiley, New York, NY (1994)

[13] Mayer TM, Baker RA, J. Electrochem. Soc., 129, 585 (1982)

[14] Meeks E, Ho P, Thin Solid Films, 365(2), 334 (2000)

[15] Oehrlein GS, Zhang Y, Vender D, Joubert O, J. Vac. Sci. Technol. A, 12(2), 333 (1994)

[16] Qi S, Lifang X, Xinxin M, Mingren SM, Appl. Surf. Sci., 206, 53 (2003)

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