Ruthenium dioxide thin films were reactively rf sputtered on SiO2/Si substrates and annealed in the temperature range from 150 to 500 degrees C. The structural and morphological properties of the films were investigated using Raman spectroscopy, transmission electron microscopy and atomic force microscopy. The increase of grain size was improved with annealing temperature. After annealing at 500 degrees C, the roughening of the RuO2/ SiO2 interface was observed. The electrical behaviour was analysed by resistivity, thermal coefficient of resistance and low frequency noise. Good correlation between structural and electrical properties of RuO2 films was established. (c) 2005 Elsevier B.V. All rights reserved.