Direct wafer-bonded InP-GaAs structures were studied by cross-sectional observations using a field-emission scanning-electron microscope (FESEM) and by infrared-absorbance spectra using a Fourier-transform infrared spectroscopy. FESEM observations demonstrate that the interfaces of 560 and 580 degrees C bonded InP-GaAs structures are smooth and uninterrupted, while interfacial gaps appear for the samples bonded at 620 and 680 degrees C. However, large dimensional areas of bonding interfaces cannot be observed by FESEM because its inspection size is limited to microregions. Experimental results show that infrared-absorbance measurements can be an effective method for quality examination of bonded InP-GaAs structures. By soaking wax into poorly bonded interfaces and using its absorption characteristics at 3.383, 3.426, and 3.509 mu m, interfacial gaps are indirectly measured by infrared spectra. Absorbance-intensity mappings at absorption peaks were used to image poorly bonded areas. Thus the interface quality of the whole wafer-bonded sample can be seen clearly. Nonuniform pressure applied over the sample during annealing step accounts for poorly bonded interfaces. Using the improved fixture, uniformly bonded InP-GaAs structures that do not have interfacial gaps were obtained. (c) 2005 American Vacuum Society.