This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. (c) 2005 Elsevier B.V. All rights reserved.