Photoinduced electron injection dynamics from Ru(dcbpy)(2)(X)(2) (dcbpy = 4,4'-dicarboxy-2,2'-bipyridine; X-2 = 2SCN(-), 2CN(-), and dcbpy; referenced as RuN3, Ru505, and Ru470) to In2O3 nanocrystalline thin films were studied using ultrafast transient IR absorption spectroscopy. After 532 nm excitation of the adsorbates, the dynamics of electron injection from their excited states to In2O3 were studied by monitoring the IR absorption of the injected electrons in the semiconductor. The injection kinetics were non-single-exponential. For samples exposed to air, the half rise times, defined as the time of 50% injection yield, were 5 +/- 0.8, 85 +/- 20, and > 200 ps for RuN3, Ru505, and Ru470, respectively. For samples in pH 2 buffer, the corresponding half time for injection from these complexes became 6 +/-1, 105 +/- 20, and 18 +/- 5 ps. The injection kinetics from RuN3 to In2O3 was found to be similar to that to SnO2. These kinetics traces showed a negligible < 100 fs injection component and were very different from those to TiO2. The dependences of the injection kinetics on adsorbate energetics and the nature of the semiconductors are discussed.