A new coating process is described (deposition from two immiscible supercritical phases, or DISP) in which a solution of supercritical carbon dioxide (scCO(2)) with a desired solute is displaced by supercritical helium (scHe). After depressurization, the solute is deposited on substrates initially submerged in the coating solvent. Micron-sized particles and thin films of sucrose octaacetate (SOA) were formed on silicon wafer substrate Coupons from DISP at relatively low temperatures and pressures (<= 6500 psi and <= 60 degrees C). The particle size, film thickness, and morphology of SOA were characterized as a function of coating conditions-solution concentrations, withdrawal velocities, and pressures. Particles in the range of 1-14 mu m in diameter were deposited at low solute concentrations (<= 0.2 wt % at 4500 psi), whereas films in the range of 6.1-0.5 mu m in thickness were deposited at higher solute concentrations (>= 1.5 wt % at 4500 psi). Particle sizes decreased with increasing displacement velocity and increasing pressure. Estimates of characteristic times for diffusion and nucleation indicate that DISP is a diffusion-limited process. Optical microscopy and atomic force microscopy (AFM) were used to characterize film morphology, including. defect formations and film roughness. Highly uniform films with low root-rnean-square (RMS) roughness (similar to 10 angstrom) were obtained at a low displacement velocity of 0.0035 cm/s, while ring-like defect Structures were observed in films deposited at a higher displacement velocity of 0.035 cm/s. The film thickness and morphology of the films deposited from DISP were compared with films from normal dip coating with typical organic solvents (acetone and toluene). Films deposited from scCO(2) by DISP were much thicker, more uniform, and exhibited much fewer drying defects and lower RMS roughness compared with films from the organic solvents.