Microcrystal line germanium carbon (mu c-Ge1-xCx) films prepared by hot-wire chemical vapor deposition were characterized by Raman, Fourier transform infra-red and X-ray photoelectron spectroscopy. mu c-Ge1-xCx films (x=0.02 to 0.03 by using dimethylgermane and x=0.07 to 0.08 by using monomethylgermane) were successfully deposited using organo-germane and hydrogen. Raman scattering measurements reveal that the microcrystalline films could be obtained with high hydrogen dilution conditions. X-ray photoelectron spectroscopy measurements suggest the possible bonding of carbon with Ge atoms in the deposited thin films. The conductivity of the films were 10(-3) similar to 10(-1) S/cm for microcrystalline films and 10(-8) similar to 10(-5) S/cm for amorphous films. The dissociation efficiency of monomethylgermane is found to be higher than that of dimethylgermane. (c) 2005 Published by Elsevier B.V.