Indium-doped zinc oxide (ZnO:In) thin films were grown on glass substrates using the chemical spray technique. The effects of the acetic acid content in the starting solution (c(AA)) as well as the substrate temperature (T-S), were studied. Our results demonstrate that when c(AA) is extremely low, the resistivity values of the zinc oxide (ZnO) thin films become relatively high (in the order of 4 x 10(-2) Omega cm). When the c(AA) is increased at a fixed temperature, the resistivity of the films decreases, reaching values as low as 4 x 10(-3) Omega cm for thin films deposited at 525 degrees C. The electron mobility could also increase to a maximum value of 10.5 cm(2)/(V s) for films deposited at 500 degrees C. We also observed an enhancement in the electrical transport properties of the films by varying T-S; the lowest resistivity values occurred in films deposited at T-S between 475 and 525 degrees C. In addition, the relative intensity of the diffraction peaks associated with the crystallographic planes is strongly affected by the CAA concentration. Xray diffraction studies reveal the polycrystalline nature of the films exhibiting a hexagonal wurtzite type, with a preferential orientation of the film depending on the acetic acid concentration. Film morphology was also affected by varying CAA, as grains with distinct geometrical shapes were observed. Finally, the optical transmittance of all these films was found to be higher than 85%. (c) 2006 Elsevier B.V. All rights reserved.