Thin Solid Films, Vol.504, No.1-2, 91-94, 2006
Erbium silicidation on SiGe for advanced MOS application
Ti capping has been found to be beneficial on Er(Si1-yGey)(2) formation in Ti/Er/Si1-xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 degrees C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1-xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1-yGey)(2) resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1-xGex samples especially after annealing at 600 degrees C. (c) 2005 Elsevier B.V. All rights reserved.
Keywords:erbium silicide;Si1-xGex