issues surrounding the integration of Hf-based high-k dielectrics with metal gates in a conventional CMOs flow are discussed. The careful choice of a gate stack process as well as optimization of other CMOs process steps enables robust CMOSFETs with a wide process latitude. HfO2 of a 2 nm physical thickness shows complete suppression of transient charge trapping resulting from a significant reduction in film volume as well as kinetically suppressed crystallization. Metal thickness is also critical when optimizing physical stress effects and minimizing dopant diffusion. A high temperature anneal after Source and drain implantation in a conventional CMOSFET process reduces the interface state density and improves electron mobility. (c) 2005 Elsevier B.V All rights reserved.