The etch characteristics of zinc oxide (ZnO) thin films were studied in a high density inductively coupoed plasma. The etch rates and etch profiles of ZnO thin films were investigated as a function of HBr gas concentration in HBr/Ar gas mixture, coil rf power, and gas pressure. Etch retes were measured by dektak surface profilometer, and etch profiles were observed by field emission scanning electron microscope. Etch profiles of ZnO thin films were improved with increasing HBr gas concentration, coil rf power, and gas pressure.