The etch characteristics of TiO2 thin films were studied in a high density inductively coupled plasma. The etch rates and etch profiles of TiO2 thin films were investigated as a function of C2F6 gas concentration in C2F6/Ar gas mixture, coil rf power, and dc-bias voltage. Etch rates were measured by dektak surface profilometer and etch profiles were observed by field emission scanning electron microscope. Etch profiles of TiO2 thin films were improved with varying C2F6 gas concentration. coil rf power, and dc-bias voltage.