Chemical mechanical polishing (CMP) is a process that is commonly used to planarize wafer surfaces during fabrication. Although the complex interactions between the wafer, pad, and slurry make the CMP process difficult to predict, it has been postulated that the motion of the slurry fluid at the wafer - pad interface has an important effect on the wafer surface wear distribution. This paper thus serves as a review of past studies of the hydrodynamics of slurry flow during chemical mechanical polishing. The reviewed studies include theoretical and numerical models as well as experimental measurements. (C) 2006 The Electrochemical Society.