We have characterized the electrochemical properties and wetting effects of various organic materials, including selected accelerators, suppressors, and wetters, for the electrodeposition of submicrometer-wide copper interconnects. An additive composition consisting of the following organic chemicals was tested: bis(3-sulfopropyl)-disulfide, disodium salt as an accelerator, polyethylene glycol as a suppressor, and a cross-linked polyamide as a second suppressor (working also as a wetter). Copper films plated using this makeup exhibited a surface roughness of similar to 35 nm after annealing, with grain sizes on the order of 0.1-0.5 mu m, and an electrical resistivity of similar to 1.9 mu Omega cm. Using this made-up solution, 120 nm wide trenches were successfully gap-filled. (c) 2006 The Electrochemical Society.