Dielectric layers with high dielectric constant, low leakage, and high breakdown strength are of great interest for application in devices such as Dynamic random access memory, decoupling capacitors, or impedance matching capacitors. However, some applications require complementary metal oxide semiconductor backend integration of those capacitors, with low-temperature processing. In this work, we prepare Pt/Sr-Ta-O/Pt and Pt/Bi-Ta-O/Pt capacitors on silicon, where dielectrics are deposited at 360 degrees C by metallorganic chemical vapor deposition (MOCVD). After capacitor fabrication, a minimal leakage is obtained for a recovery anneal at a temperature of 500 degrees C for Pt/Sr-Ta-O/Pt and 300 degrees C for Pt/Bi-Ta-O/Pt. We show that both types of dielectrics are promising for incorporation in backend integrated high-k capacitors. Particularly, their leakage level is lower than reported for other dielectrics, which constitutes a significant advantage for memory application. The results also suggest that MOCVD is a suited technique to obtain very thin Sr-Ta-O and Bi-Ta-O films which are dense, smooth, and with good interfacial quality. (c)circle plus 2006 The Electrochemical Society.