Variations in the texture of 200 nm thick NiCr films grown on SiO2/Si substrates at various deposition temperatures were determined using a dc magnetron cosputtering technique. The texture of the NiCr films was dependent on the deposition temperature used and was governed by that of the Ni films rather than Cr films deposited at various temperatures. The variations in texture were in good agreement with grain shape as a function of deposition temperature. The resistivity of the films decreased with increasing deposition temperature, and the temperature coefficient of electrical resistivity (TCR) values varied from negative to a positive value with increasing deposition temperature. NiCr films deposited at 300 S C exhibited a 4 ppm/K of near zero TCR, resulting in a TCR suitable for pi-type attenuator applications. (c) 2006 The Electrochemical Society.