In this study, two different types of internal linear antennas were compared and their characteristics were investigated for a large area ICPs applied to FPD processing. The measured plasma density for the double comb-type antenna was higher than 2 x 10(11)/cm(3) and the etch rates of photoresist and SiO2 at 5000 W rf power, -60 V of dc-bias voltage, and 15 mTorr SF6 were about 3000 angstrom/min and 1500 angstrom/min. The etch non-uniformity of the photoresist within the substrate was about 7% at 5000 W of rf power. (c) 2005 Elsevier B.V. All rights reserved.