화학공학소재연구정보센터
Thin Solid Films, Vol.506, 479-484, 2006
Electron temperature measurement in SiH4/H-2 ECR plasma produced by 915 MHz microwaves
Plasma parameters of a SiH4/H-2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (T-c) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, T-c is found to depend on the spatial profiles of the power absorption, which suggests that T-c in a SiH4/H-2 ECR plasma can be changed by changing the power absorption profile. (c) 2005 Elsevier B.V. All rights reserved.