We synthesized silicon films (hydrogenated microcrystalline silicon in hydrogenated amorphous silicon) and silicon nitride films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb source gases (SiH4 or Si2H6). The photoconductivity of the silicon film was 0.7 x 10(-5) Omega(-1) cm(-1) and the dark conductivity was 3.3 x 10(-5) Omega(-1) cm(-1). The dielectric constant of the silicon nitride film was estimated to be 6.5-7.0. (c) 2005 Elsevier B.V. All rights reserved.