화학공학소재연구정보센터
Thin Solid Films, Vol.508, No.1-2, 175-177, 2006
In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces
Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (R-HEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O-2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness. (c) 2005 Elsevier B.V. All rights reserved.