Experimental results obtained with MBE-grown vertical planar-doped-barrier MOSFET (PDBFET) are presented. The device features all excellent I-ON/I-OFF ratio. At low drain-source voltages it behaves like a conventional short channel MOSFET with good short channel performance. A large drain bias activates gate controlled impact ionization which leads to a swing of less than 20 mV/dec. (c) 2005 Elsevier B.V. All rights reserved.