The effect of crystal quality in an Si-overlayer on photo luminescence properties of beta-FeSi2 was investigated for an Si-overlayer prepared on beta-FeSi2/Si by thermal CVD and plasma-enhanced CVD method. The intrinsic PL spectrum attributed to the interband transition of beta-FeSi2 was observed from Si/beta-FeSi2/Si double heterostructure consisted of poor-crystalline Si-overlayer. (c) 2005 Elsevier B.V. All rights reserved.