Antimony-doped tin oxide (SnO2:Sb) thin films were fabricated by an ultrasonic spray pyrolysis method. The effect of antimony doping on the structural, electrical and optical properties of tin oxide thin films were investigated. Tin(IT) chloride dehydrate (SnCl2-2H(2)O) and antimony(III) chloride (SbCl3) were used as a host and a dopant precursor. X-ray diffraction analysis showed that the non-doped SnO2 thin film had a preferred (211) orientation, but as the Sb-doping concentration increased, a preferred (200) orientation was observed. Scanning electron microscopy studies indicated that the polyhedron-like grains observed for the non-doped SnO2 thin films became rounder and decreased in size with the Sb-doping concentration. The lowest resistivity (about 8.4 x 10(-4) Omega(.)cm) was obtained for the 3 at.% Sb-doped films. Antimony-doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance level in the near infrared region was lowered with the Sb-doping concentration. (c) 2006 Elsevier B.V. All rights reserved.