Ta2N films were deposited on SiO2/Si substrates using reactive do magnetron, sputtering, and were then annealed in a vacuum ambient. The structural and electrical properties of Ta2N films and their dependence on the film thickness (50-200 nm) were characterized with respect to their application as II-type attenuators. The root mean square roughness and temperature coefficient of resistance (TCR) increased with increasing film thickness. The near zero TCR value of the films is possible by controlling the annealing temperature or film thickness. The sheet resistance and TCR of 50 nm thick Ta2N films are approximately 80 Omega/square and -24 ppm/K, respectively, and are suitable for 10 dB applications in Pi-type attenuators. (c) 2006 American Vacuum Society.