Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Jung IY; Park YM; Park YJ; Lee JI; Kim TW

Journal of Materials Science, Vol.41, No.15, 5036-5039, 2006

DOI10.1007/s10853-006-0133-5 Export Citation

Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Jung IY, Park YM, Park YJ, Lee JI, Kim TW