The electrical properties of very thin-barium doped titanium silicon oxide films grown on silicon by liquid-phase deposition were studied. The static dielectric constant is about 32 after thermal annealing in oxygen ambient at 600 S C. The equivalent oxide thickness can reach 0.9 nm with the leakage current density of 5 x 10(-6) A/cm(2) at 5 MV/cm. It has high potential for the future development of metal-oxide-semiconductor field-effect-transistors. (c) 2006 The Electrochemical Society.