In this study, we mainly used the characteristics of electron-beam lithography in measurement control and direct-write technology to improve the physical restrictions and production processes of optical lithography and other nanopattern production methods. We did this by using a silicon wafer as a substrate, coating a negative-tone photoresist, and using scattering and the reflection produced by the collision of an electron beam with the wafer lattice and the proximity effect of a secondary electron inside the electron-beam photoresist to produce an antireflection matrix structure with a moth-eye effect. In addition, we used the Taguchi quality method with an orthogonal array to plan the experiment and the signal-to-noise ratio to analyze the experimental data, and in the experimental process, we produced a full factorial equivalent experiment, using very few experiment repetitions and deriving optimum,conditions. Also, we used back-propagation neural networks to fine-tune significant factors, allowing the production of the deepest process control parameters and thereby imparting to the antireflection matrix structure the best effect. (c) 2006 Wiley Periodicals, Inc.