By using chemical vapor deposition method, 4H-SiC films have been grown on AlN/Si(100) complex substrates at the temperature below 1100 degrees C. Substitutional Al and N are found in the SiC film. Photoluminescence (PL) peaks, related to Al acceptor and N shallow donor, respectively, have been observed at the room-temperature. The higher partial pressure ratio of SiH4 and C2H4 (P-C2H4/P-SiH4 >= 1.62) results in more Si-vacancy (V-Si) in the film. The PL peak related to the V-Si acceptor level is also observed. (c) 2006 Published by Elsevier B.V.