Silicon carbide films were deposited on n-type Si substrates (111) of resistivity 2 - 7 Omega cm in a high-frequency parallel-plate plasma reactor. The deposition temperatures were 250, 350 and 450 degrees C, respectively. The RBS results showed that the concentrations of Si and C in the films depend a little on the deposition temperature. The films contain a small amount of oxygen and nitrogen. IR results showed the presence of Si-C, Si-H, C-H, Si-O, Si-N specific bonds. The AFM micrographs revealed that the film surface is rather smooth and compact. (c) 2005 Elsevier B.V. All rights reserved.