A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HE The p-i-n diodes have an active layer (20-60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si: H and a top-layer of p(+) doped silicon, the substrate being of n(+) Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias. (c) 2005 Elsevier B.V. All rights reserved.