화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Chemical Engineering, Vol.24, No.1, 154-164, January, 2007
DOI10.1007/s11814-007-5025-0  Export Citation
Numerical simulation on silane plasma chemistry in pulsed plasma process to prepare a-Si :H thin films
Dong-Joo Kim, Jin-Yi Kang, Anna Nasonova, Kyo-Seon Kim†, and Sang-June Choi1
  • Department of Chemical Engineering, Kangwon National University, Chuncheon, Gangwon-do 200-701, Korea
  • 1Department of Environmental Engineering, KyungPook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
E-mail:
We numerically calculated the effects of pulse modulation (plasma-on and -off times) on the concentration changes of the chemical species (SiH4, SiHx, SiHx+ and polymerized negative ions) and also the growth rate of a-Si : H thin films in the pulsed SiH4 plasmas. During the plasma-on, SiHx is generated quickly by a fast dissociative reaction of SiH4, but, during plasma-off, SiHx disappears rapidly by a reaction with hydrogen and also by the deposition onto the reactor wall. During the plasma-on, the negative ions are polymerized by the reactions with SiH4, but, during the plasma-off, they disappear by neutralization reactions with positive ions. As the plasma-on time increases or as the plasma-off time decreases, the time-averaged concentrations of SiHx and negative ions and also the time-averaged film growth rate increase. This study shows quantitatively that polymerized negative ions, which are not considered to be preferred precursors for the high-quality thin films, can be efficiently reduced by the pulsed plasma process.
Keywords:Pulse Modulation;SiH4 Plasma Chemical Reactions;Pulsed Plasmas;Polymerization of Negative Ions;Highquality Thin Film
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