The deposition of yttria-stabilized zirconia films on a NiO-ceria substrate by chemical vapor infiltration (CVI) using ZrCl4 and YCl3 as metal sources and NiO-ceria as oxygen source was studied. The resultant films were cubic YSZ with a Y2O3 content of 3.7-4.2mol%, and were transparent and strong. A NiO content of NiO-ceria above 60 mol% increases the growth rate of the YSZ film from about 5 to 25 mu m over 2 h, indicating that chemical vapor deposition (CVD) occurred in addition to electrochemical vapor deposition (EVD), whereas NiO contents below 60 mol% does not affect the growth rate, indicating that only electrochemical vapor deposition occurred. The growth mechanism of the YSZ film is determined and a YSZ thin film is successfully fabricated on NiO-ceria to improve mechanical strength. (c) 2006 Elsevier B.V. All rights reserved.