In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society.