The use of ion-exchange techniques for doping silicate glasses with transition metals has attracted much attention in the last decades for its potential in several applications, namely, light waveguides technology, luminescent materials, and for the possibility to realize systems in which metal nanocluster formation is controlled by suitable post-exchange techniques. in this framework, the control of metal distribution inside the glass is a central issue for both the understanding of the incorporation process and for the definition of effective preparation protocols. In this experiment, metallic films (Ag, Cu, An, Co) were deposited onto the substrates by the rf-sputtering technique. Metal ions then penetrate to substitute glass alkali by means of field-assisted ion-exchange, realized at different temperature and electric field values. In particular, we present in this paper the An doping of silicate glasses, successfully realized for the first time with this method. The gold diffusion profiles, as measured by Secondary Ion Mass Spectrometry (SIMS), indicate that the migration depends on the experimental parameters (temperature and electric field), but also on the local structure, as well as on chemical phenomena occurring at the metal/glass interface. (c) 2006 Elsevier B.V. All rights reserved.