In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k similar to 7), the NISZ passivation layer exhibits a low residual stress and low dielectric constant (k similar to 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2006 Elsevier B.V. All rights reserved.