Epitaxial hexagonal YMnO3 (h-YMnO3) films having sharp (00l) X-ray diffraction peaks were grown above 700 degrees C in 5 mTorr O-2 via pulsed laser deposition both on as-received wurtzite GaN/AlN/6H-SiC(001) (w-GaN) substrates as well as on w-GaN surfaces that were etched in 50% HF solution. High-resolution transmission electron microscopy revealed an interfacial layer between film and the unetched substrate; this layer was absent in those samples wherein an etched substrate was used. However, the substrate treatment did not affect the epitaxial arrangement between the h-YMnO3 film and w-GaN substrate. The epitaxial relationships of the h-YMnO3 films with the w-GaN(001) substrate was determined via X-ray diffraction to be (001)(YMnO3)parallel to(001)(GaN):[1 (1) over bar0](YMnO3)parallel to[110](GaN); in other words, the basal planes of the film and the substrate are aligned parallel to one another, as are the most densely packed directions in planes of the film and the substrate. Interestingly, this arrangement has a larger lattice mismatch than if the principal axes of the unit cells were aligned. (c) 2006 Published by Elsevier B.V.