Epitaxial growth of CeO2 and yttria-stabilized ZrO2 (YSZ) double layer films has been successfully carried out on biaxially textured nickel substrates at a temperature between 400 and 600 degrees C using electrostatic spray assisted vapour deposition method. The structure of the double layer was characterized by X-ray diffraction and scanning electron microscopy. The results show that highly oriented CeO2/YSZ double buffer films were formed epitaxially onto biaxially textured Ni substrates. The orientation relationships between YSZ layer and Ni substrate are 001(YSZ)//001(Ni) and 110(YSZ)//100(Ni), while the orientation relationships between CeO2 and YSZ are 001(CeO2)//001(YSZ) and 100(CeO2)//100(YSZ). (c) 2006 Elsevier B.V. All rights reserved.