화학공학소재연구정보센터
Thin Solid Films, Vol.515, No.4, 2481-2484, 2006
Epitaxial molybdenum oxycarbide thin films synthesized by inductively coupled radio-frequency plasma assisted magnetron sputtering
Cubic molybdenum oxycarbide films have been synthesized on SUS 3 04 stainless steel and MgO(110) substrates at a temperature of 673 K by an inductively coupled radio-frequency plasma assisted magnetron sputtering method. X-ray diffraction measurement revealed that films prepared on stainless steel under a condition of high negative bias were polycrystalline and strongly (110) orientated molybdenum oxycarbide (Mo(C,O)) and that films prepared on an MgO(110) substrate under a high negative bias of -450 V were epitaxially grown Mo(C,O). The films showed an electric resistivity of 3 mu Omega m at 300 K and superconductivity with a superconducting transition temperature lower than 2.9 K. (c) 2006 Elsevier B.V All rights reserved.