As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low temperature. In this study, the electrical field was directly applied between source and drain areas of H shape patterns using the Mo-W interconnecting layer. The effects of the current density and electrical field strength on the crystallization behavior were investigated. Results show that the crystallization behaviors at different bias areas are different. The difference is attributed to the coexisting effects of electromigration and potential gradient. In addition, the dependence of the degree of crystallization on the current density was studied by Raman spectra and the microstructure crystallized by FALC was observed by a scanning electron microscope. (c) 2006 Elsevier B.V. All rights reserved.